PC-8-4

Strain Tuning of Epitaxially Grown (Ba,K)Fe2As2

10:00-10:15 30/11/2023

*Dongyi Qin, Michio Naito, and Akiyasu Yamamoto
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184–8588, Japan.
JST CREST, Kawaguchi, Saitama 332–0012, Japan.
Abstract Body

Superconductivity in Fe-based superconductors emerges with chemical substitution with the highest critical temperature (Tc) of 56 K in SmFeAs(O,F). Lattice strain caused by pressure application and partial substitution of isovalent element also causes superconductivity. For example, a high Tc of 31 K has been reported for pressure-applied BaFe2As2[1], and 31 K for the partial substitution of an isovalent element, P, at the As site[2]. More recently, Kang et al. have reported the superconductivity in undoped BaFe2As2 by tetrahedral geometry design[3].

In this study, we report the strain effect on superconducting properties in (Ba,K)Fe2As2 epitaxial thin films caused by lattice mismatch. In comparison to the high-pressure experiments, epitaxial strain enables the application of two-dimensional pressure in the in-plane direction, and it is possible to apply not only compressive strain but also tensile strain. (Ba,K)Fe2As2 epitaxial thin films were grown using custom-designed molecular-beam epitaxy. Films were grown on various substrates (CaF2, SrF2, BaF2, etc.) at around 400°C[4]. Real-time rate monitoring of fluxes was enabled by electron impact emission spectrometry (EIES) and atomic absorption spectrometry (AAS): EIES for Ba and Fe, and AAS for K. The films exhibit a sharp c-axis orientation without misorientations (fig.1(a)). Tc of the films was compared with polycrystals[5] as shown in Figure 1(b). Strong c-axis length dependency on the Tc was confirmed.

References

[1] S. Kimber et al., Nature Mater 8, 471 (2009).
[2] M. Nakajima et al., J. Phys. Soc. Jpn. 81, 104710 (2012).
[3] J.-H. Kang et al., Proc. Natl. Acad. Sci. USA 117, 21170 (2020).
[4] D. Qin et al., Phys. Rev. Materials 5, 014801 (2020).
[5] M. Rotter et al., Angew. Chem. Int. Ed. 47, 7949 (2008).

Acknowledgment

This work was supported by JST CREST Grant Number JPMJCR18J4 and Grant-in-Aid for JSPS Fellows Grant Number JP22J23857.

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